MRFE6P9220HR3
7
Freescale Semiconductor
RF Product Device Data
TYPICAL CHARACTERISTICS
500
14
24
0
75
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 1600 mA
f = 880 MHz
100
10
22
20
16
C
60
45
30
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
1
TC
= ?30
C
85C
25C
?30C
25
85C
Figure 8. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD
= 24 V
G
ps
, POWER GAIN (dB)
400
14.5
20.5
50
19.5
15.5
100 150 250 300 350200
16.5
17.5
IDQ
= 1600 mA
f = 880 MHz
32 V
0
18.5
28 V
Figure 9. MTTF Factor versus Junction Temperature
18
15
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD
= 28 Vdc, P
out
= 47 W Avg., and
ηD
= 30%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
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